AP9997AGH MOSFET Transistor

The AP9997AGH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9997AGH transistor as follows.

AP9997AGH Transistor Specification

Transistor Code		AP9997AGH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.185Ohm
Power Dissipation (Maximum)	PD	34.7W
Drain-Source Capacitance		55pF
Rise Time		13.5nS
Gate-Threshold Voltage (Maximum)		2.5V

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