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AP9992AGI-HF MOSFET Transistor

The AP9992AGI-HF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9992AGI-HF transistor as follows.

Circuit diagram symbol of the AP9992AGI-HF transistor

AP9992AGI-HF Transistor Specification

Transistor Code AP9992AGI-HF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220CFM
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0035Ohm
Power Dissipation (Maximum) PD 41.6W
Drain-Source Capacitance 870pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 82nS
Total Gate Charge 92nC

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