AP9992AGI-HF MOSFET Transistor

The AP9992AGI-HF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9992AGI-HF transistor as follows.

AP9992AGI-HF Transistor Specification

Transistor Code		AP9992AGI-HF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220CFM
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	41.6W
Drain-Source Capacitance		870pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		82nS
Total Gate Charge		92nC

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