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AP9980GM MOSFET Transistor

The AP9980GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9980GM transistor as follows.

Circuit diagram symbol of the AP9980GM transistor

AP9980GM Transistor Specification

Transistor Code AP9980GM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.052Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 130pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 3V

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