AP9972GS MOSFET Transistor

The AP9972GS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9972GS transistor as follows.

AP9972GS Transistor Specification

Transistor Code		AP9972GS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	89W
Drain-Source Capacitance		280pF
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		3V

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