AP9970GW MOSFET Transistor

The AP9970GW is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9970GW transistor as follows.

AP9970GW Transistor Specification

Transistor Code		AP9970GW
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1320pF
Rise Time		240nS
Gate-Threshold Voltage (Maximum)		4V

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