AP9960GM MOSFET Transistor

The AP9960GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9960GM transistor as follows.

AP9960GM Transistor Specification

Transistor Code		AP9960GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		235pF
Rise Time		6.3nS
Gate-Threshold Voltage (Maximum)		3V

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