AP9923GEO MOSFET Transistor

The AP9923GEO is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9923GEO transistor as follows.

AP9923GEO Transistor Specification

Transistor Code		AP9923GEO
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Transistor SMD Code		9923GEO
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		635pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		1V

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