AP9922GEO MOSFET Transistor

The AP9922GEO is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9922GEO transistor as follows.

AP9922GEO Transistor Specification

Transistor Code		AP9922GEO
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP8
Transistor SMD Code		9922GEO
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	6.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		295pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1V

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