AP9920GEO MOSFET Transistor

The AP9920GEO is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9920GEO transistor as follows.

AP9920GEO Transistor Specification

Transistor Code		AP9920GEO
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	4.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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