AP9916GJ MOSFET Transistor

The AP9916GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9916GJ transistor as follows.

AP9916GJ Transistor Specification

Transistor Code		AP9916GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	18V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		258pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		1V

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