AP9585GJ MOSFET Transistor

The AP9585GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9585GJ transistor as follows.

AP9585GJ Transistor Specification

Transistor Code		AP9585GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	11.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	44.6W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS

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