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AP9576GM MOSFET Transistor

The AP9576GM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9576GM transistor as follows.

Circuit diagram symbol of the AP9576GM transistor

AP9576GM Transistor Specification

Transistor Code AP9576GM
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 3V

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