AP9569GM MOSFET Transistor

The AP9569GM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9569GM transistor as follows.

AP9569GM Transistor Specification

Transistor Code		AP9569GM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3V

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