AP9563GJ MOSFET Transistor

The AP9563GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9563GJ transistor as follows.

AP9563GJ Transistor Specification

Transistor Code		AP9563GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		140pF
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		3V

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