AP9561GJ MOSFET Transistor

The AP9561GJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9561GJ transistor as follows.

AP9561GJ Transistor Specification

Transistor Code		AP9561GJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	54.3W
Drain-Source Capacitance		360pF
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		3V

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