AP9479GM MOSFET Transistor

The AP9479GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9479GM transistor as follows.

AP9479GM Transistor Specification

Transistor Code		AP9479GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		90pF
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		3V

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