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AP9479GM MOSFET Transistor

The AP9479GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9479GM transistor as follows.

Circuit diagram symbol of the AP9479GM transistor

AP9479GM Transistor Specification

Transistor Code AP9479GM
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 90pF
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 3V

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