AP9465GEM MOSFET Transistor

The AP9465GEM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9465GEM transistor as follows.

AP9465GEM Transistor Specification

Transistor Code		AP9465GEM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	7.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.7nS
Gate-Threshold Voltage (Maximum)		2.5V

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