AP8N3R5CMT MOSFET Transistor

The AP8N3R5CMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP8N3R5CMT transistor as follows.

AP8N3R5CMT Transistor Specification

Transistor Code		AP8N3R5CMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		1615pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		5V

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