AP8N010LM MOSFET Transistor

The AP8N010LM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP8N010LM transistor as follows.

AP8N010LM Transistor Specification

Transistor Code		AP8N010LM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		1020pF
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V

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