AP88N30W MOSFET Transistor

The AP88N30W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP88N30W transistor as follows.

AP88N30W Transistor Specification

Transistor Code		AP88N30W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		1775pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		142nS
Total Gate Charge		150nC

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