AP86T03GJ MOSFET Transistor

The AP86T03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP86T03GJ transistor as follows.

AP86T03GJ Transistor Specification

Transistor Code		AP86T03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		485pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		78nS

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