AP86T02GJB MOSFET Transistor

The AP86T02GJB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP86T02GJB transistor as follows.

AP86T02GJB Transistor Specification

Transistor Code		AP86T02GJB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		490pF
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		3V

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