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AP86T02GJ MOSFET Transistor

The AP86T02GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP86T02GJ transistor as follows.

Circuit diagram symbol of the AP86T02GJ transistor

AP86T02GJ Transistor Specification

Transistor Code AP86T02GJ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO251
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.006Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 490pF
Rise Time 105nS
Gate-Threshold Voltage (Maximum) 3V

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