AP8604CDT MOSFET Transistor

The AP8604CDT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP8604CDT transistor as follows.

AP8604CDT Transistor Specification

Transistor Code		AP8604CDT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN5X6
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0026Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		2180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		89nS
Gate-Threshold Voltage (Maximum)		5V

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