AP8600P MOSFET Transistor

The AP8600P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP8600P transistor as follows.

AP8600P Transistor Specification

Transistor Code		AP8600P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		1570pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		5V

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