AP85T10GP MOSFET Transistor

The AP85T10GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP85T10GP transistor as follows.

AP85T10GP Transistor Specification

Transistor Code		AP85T10GP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		770pF
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		5V

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