AP83T03GJ MOSFET Transistor

The AP83T03GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP83T03GJ transistor as follows.

AP83T03GJ Transistor Specification

Transistor Code		AP83T03GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		340pF
Rise Time		86nS
Gate-Threshold Voltage (Maximum)		3V

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