AP80SL990BJB MOSFET Transistor

The AP80SL990BJB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP80SL990BJB transistor as follows.

AP80SL990BJB Transistor Specification

Transistor Code		AP80SL990BJB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.99Ohm
Power Dissipation (Maximum)	PD	78.1W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4.5V

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