AP80N30W MOSFET Transistor

The AP80N30W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP80N30W transistor as follows.

AP80N30W Transistor Specification

Transistor Code		AP80N30W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.066Ohm
Power Dissipation (Maximum)	PD	208W
Drain-Source Capacitance		525pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		117nC

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