AP7811GM MOSFET Transistor

The AP7811GM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP7811GM transistor as follows.

AP7811GM Transistor Specification

Transistor Code		AP7811GM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	11.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		1.2V

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