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AP76T03AGMT MOSFET Transistor

The AP76T03AGMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP76T03AGMT transistor as follows.

Circuit diagram symbol of the AP76T03AGMT transistor

AP76T03AGMT Transistor Specification

Transistor Code AP76T03AGMT
Transistor Type MOSFET
Control Channel Type N-Channel
Package PMPAK5X6
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 20.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0072Ohm
Power Dissipation (Maximum) PD 5W
Drain-Source Capacitance 260pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 3V

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