AP70T03GJB MOSFET Transistor

The AP70T03GJB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP70T03GJB transistor as follows.

AP70T03GJB Transistor Specification

Transistor Code		AP70T03GJB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	53W
Drain-Source Capacitance		245pF
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		3V

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