AP70L02GJ MOSFET Transistor

The AP70L02GJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP70L02GJ transistor as follows.

AP70L02GJ Transistor Specification

Transistor Code		AP70L02GJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	66A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	66W
Drain-Source Capacitance		475pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		95nS

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