AP6P064JB MOSFET Transistor

The AP6P064JB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6P064JB transistor as follows.

AP6P064JB Transistor Specification

Transistor Code		AP6P064JB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO251S
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.064Ohm
Power Dissipation (Maximum)	PD	33.7W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		3V

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