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AP6P064I MOSFET Transistor

The AP6P064I is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6P064I transistor as follows.

Circuit diagram symbol of the AP6P064I transistor

AP6P064I Transistor Specification

Transistor Code AP6P064I
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO220F
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.064Ohm
Power Dissipation (Maximum) PD 22.7W
Drain-Source Capacitance 110pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 3V

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