AP6P025M MOSFET Transistor

The AP6P025M is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6P025M transistor as follows.

AP6P025M Transistor Specification

Transistor Code		AP6P025M
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		240pF
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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