AP6N8R2LMT MOSFET Transistor

The AP6N8R2LMT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N8R2LMT transistor as follows.

AP6N8R2LMT Transistor Specification

Transistor Code		AP6N8R2LMT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PMPAK5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		1330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		36nS
Gate-Threshold Voltage (Maximum)		3V

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