AP6N8R2ALH MOSFET Transistor

The AP6N8R2ALH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N8R2ALH transistor as follows.

AP6N8R2ALH Transistor Specification

Transistor Code		AP6N8R2ALH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0082Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		1070pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		3V

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