AP6N6R5P MOSFET Transistor

The AP6N6R5P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N6R5P transistor as follows.

AP6N6R5P Transistor Specification

Transistor Code		AP6N6R5P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00658Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		1370pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		5V

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