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AP6N4R2P MOSFET Transistor

The AP6N4R2P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N4R2P transistor as follows.

Circuit diagram symbol of the AP6N4R2P transistor

AP6N4R2P Transistor Specification

Transistor Code AP6N4R2P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 115A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0042Ohm
Power Dissipation (Maximum) PD 104W
Drain-Source Capacitance 2250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 48nS
Gate-Threshold Voltage (Maximum) 3.5V

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