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AP6N3R5LIN MOSFET Transistor

The AP6N3R5LIN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N3R5LIN transistor as follows.

Circuit diagram symbol of the AP6N3R5LIN transistor

AP6N3R5LIN Transistor Specification

Transistor Code AP6N3R5LIN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220F-NL
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0035Ohm
Power Dissipation (Maximum) PD 32.9W
Drain-Source Capacitance 2830pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 55nS
Gate-Threshold Voltage (Maximum) 3V

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