AP6N2K0EN MOSFET Transistor

The AP6N2K0EN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N2K0EN transistor as follows.

AP6N2K0EN Transistor Specification

Transistor Code		AP6N2K0EN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23S
Transistor SMD Code		A23SS
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.45A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	0.7W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		3V

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