AP6N1R7CDT MOSFET Transistor

The AP6N1R7CDT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N1R7CDT transistor as follows.

AP6N1R7CDT Transistor Specification

Transistor Code		AP6N1R7CDT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN5X6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0017Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		4550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V

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