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AP6N090N MOSFET Transistor

The AP6N090N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N090N transistor as follows.

Circuit diagram symbol of the AP6N090N transistor

AP6N090N Transistor Specification

Transistor Code AP6N090N
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT23S
Transistor SMD Code A07SS
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.09Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 40pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 3V

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