AP6N090LK MOSFET Transistor

The AP6N090LK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N090LK transistor as follows.

AP6N090LK Transistor Specification

Transistor Code		AP6N090LK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	2.78W
Drain-Source Capacitance		35pF
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		2.5V

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