AP6N090G MOSFET Transistor

The AP6N090G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N090G transistor as follows.

AP6N090G Transistor Specification

Transistor Code		AP6N090G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT89
Transistor SMD Code		6N090
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3V

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