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AP6N023H MOSFET Transistor

The AP6N023H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N023H transistor as follows.

Circuit diagram symbol of the AP6N023H transistor

AP6N023H Transistor Specification

Transistor Code AP6N023H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.023Ohm
Power Dissipation (Maximum) PD 31.2W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 3V

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