AP6A100M MOSFET Transistor

The AP6A100M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6A100M transistor as follows.

AP6A100M Transistor Specification

Transistor Code		AP6A100M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		35pF
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3V

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