AP6800GEO MOSFET Transistor

The AP6800GEO is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6800GEO transistor as follows.

AP6800GEO Transistor Specification

Transistor Code		AP6800GEO
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		315pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.4nS

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