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AP6683GYT-HF MOSFET Transistor

The AP6683GYT-HF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6683GYT-HF transistor as follows.

Circuit diagram symbol of the AP6683GYT-HF transistor

AP6683GYT-HF Transistor Specification

Transistor Code AP6683GYT-HF
Transistor Type MOSFET
Control Channel Type P-Channel
Package PMPAK3X3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 14.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 3.13W
Drain-Source Capacitance 430pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Total Gate Charge 37nC

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